# Renesas launches 650V GaN chip for high‑power AI data centers

> Renesas introduced a dual‑side cooled 8×8 mm GaN device rated at 650 V, aimed at megawatt‑scale AI server power conversion.

Oossa · 2026-09-30 · https://oossa.com/en/renesas-launches-650v-gan-chip-for-high-power-ai-data-centers

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Renesas announced a new power chip for AI data centers. It is a gallium‑nitride (GaN) device that can handle 650 V and uses cooling on both sides of an 8 mm × 8 mm package. The design is meant for dense power conversion in 800 V AI server architectures. The company says the chip targets megawatt‑scale AI workloads.

## The facts

- 650 V rating, 8 mm × 8 mm dual‑side cooled package
- Announcement date: 2026‑09‑30

## Why it matters

Higher voltage GaN chips can make AI data‑center power supplies smaller and more efficient.

## Sources & references

1. [Renesas Unveils Industry's First 650V GaN in Dual-Side Cooled 8x8mm Package for Megawatt-Scale AI Data Centers](http://www.businesswire.com/news/home/20260930184285/en/Renesas-Unveils-Industrys-First-650V-GaN-in-Dual-Side-Cooled-8x8mm-Package-for-Megawatt-Scale-AI-Data-Centers/?feedref=JjAwJuNHiystnCoBq_hl-WsGkFyUNMTSNrPsg57HLEqqcp-o_pnudlUwsb5apQ1S4gUE65BTfjH3-pSuqdv0gW3cb3F4oTIgUqCPafFkgu5AneicJQDNboWvodvG82E0) – Business Wire, 2026-09-30

Last updated: 2026-09-30