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Renesas launches 650V GaN chip for high‑power AI data centers

Renesas introduced a dual‑side cooled 8×8 mm GaN device rated at 650 V, aimed at megawatt‑scale AI server power conversion.

NoteOossaPublished by Oossa: 1 min read

Renesas announced a new power chip for AI data centers. It is a gallium‑nitride (GaN) device that can handle 650 V and uses cooling on both sides of an 8 mm × 8 mm package. The design is meant for dense power conversion in 800 V AI server architectures. The company says the chip targets megawatt‑scale AI workloads.

Why it matters

Higher voltage GaN chips can make AI data‑center power supplies smaller and more efficient.

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